| PART |
Description |
Maker |
| MT4S102T |
UHF-SHF Low Noise Amplifier Application
|
Toshiba Semiconductor
|
| 2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SC4673 |
NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications
|
SANYO
|
| 2SC5666 |
UHF to S-band Low-noise Amplifier
|
Sanyo Semiconductor Corporation
|
| MT3S37T |
UHF LOW NOISE AMPLIFIER APPLICATION
|
Toshiba Semiconductor
|
| MT3S07T07 |
VHF~UHF Band Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| EC3H07BA |
UHF to S Band Low-Noise Amplifier and OSC Applications
|
Sanyo Semicon Device
|
| 2SC4405 |
UHF Low-Noise, Wide-Band Amplifier Applications
|
SANYO[Sanyo Semicon Device]
|
| MT3S06S07 MT3S06S |
VHF~UHF Band Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| MT3S04AT07 |
VHF~UHF Band Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
